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Buffered Oxide Etchants
Buffered Oxide Etchants

Buffered Oxide Etchants

Buffered oxide etchants (BOE) are used commonly used in microfabrication. Their primary use is in etching thin films of silicon dioxide (SiO2) or silicon nitride (Si3N4). Browse our semiconductor grade Puranal™ products.

Normal etching of SiO2 will deplete the fluroide ion concentration, leading to an etch rate which changes over time. Buffering with NH4F slows the etch rate and results in more polishing of the Si surface.

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AWF 10-88-2-LST SLSI Puranal

Ammonium Fluoride Etching Mixture (17035)

AF 500:1 ULSI Puranal

Ammonium Fluoride Etching Mixture (17043)

AF 90-10 ULSI Puranal

Ammonium Fluoride Etching Mixture (17053)

AWF 560-349-91 ULSI Puranal

Ammonium Fluoride Etching Mixture (17063)

AWF 962-35-3 Puranal

Ammonium Fluoride Etching Mixture (17070)

AWF 602-384-14 LST, SLSI Puranal

Ammonium Fluoride Etching Mixture (17235)

AF 875-125 (BOE 8:1) LST, VLSI Puranal

Ammonium Fluoride Etching Mixture (17249)

AF 500-1 LST ULSI Puranal

Ammonium Fluoride Etching Mixture (17255)

AF 91-9 VLSI Puranal

Ammonium Fluoride Etching Mixture (17256)

AF 970-30 VLSI Puranal

Ammonium Fluoride Etching Mixture (17262)

AWF 40-956-4, XLSI Puranal

Ammonium Fluoride Etching Mixture (17268)

AF 876-124 (7.2:1) LST VLSI Puranal

Ammonium Fluoride Etching Mixture (17269)

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