Patterning Assistance Materials
Honeywell UVAS™ Polymer
A Silicon-Rich Middle Layer for ArF and KrF Tri-Layer Patterning Applications
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Overview
The UVAS technology is a SiO-rich siloxane polymer designed for use as the middle layer (etch transfer layer) in both ArF and KrF tri-layer patterning in state-of-the-art IC devices. UVAS polymer also functions as a superb hard mask material for double patterning and EUV lithography. UVAS polymer is synthesized using monomers tailored to meet the lithographic and etch requirements for these demanding applications.UVAS films include anti-reflective properties for ArF and KrF patterning and a high Si content for optimum etch selectivity to the photoresist and organic underlayer. UVAS products meet all the material shelf life properties required for the IC manufactur ing environment.
Specifications
General Information
- Application
- BARC
- Etch Selectivity Layers
- Masking Layers
- Brand
- Honeywell
General Information
- Application
- BARC
- Etch Selectivity Layers
- Masking Layers
- Brand
- Honeywell
- Brand : Honeywell
- Application : BARC|Etch Selectivity Layers|Masking Layers
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